Transport imaging in the one dimensional limit
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Authors
Winchell, Stephen D.
Subjects
Nanowire
Minoriy Carrier
Transport Parameters
FIB Damage
GaN
ZnO
Transport Imaging
Minoriy Carrier
Transport Parameters
FIB Damage
GaN
ZnO
Transport Imaging
Advisors
Haegel, Nancy M.
Date of Issue
2006-06
Date
Publisher
Monterey, CA; Naval Postgraduate School
Language
Abstract
Transport imaging is a SEM-based technique used to directly image the motion and recombination of charge in luminescent semiconductors, allowing for the extraction of transport parameters critical to device operation. In this thesis, transport imaging for 1D structures was initiated with work on sample preparation, modeling and initial characterization. One dimensional structures are being integrated into forefront electronics due to their inherent advantages in size, packing density and power consumption. In this work the one dimensional equation for steady state minority carrier recombination distribution solved for the Gaussian source is derived and results from numerical simulations are presented. The diameter of the SEM beam is determined experimentally allowing for accurate simulation parameters. Intensity and drift measurements on four batches of top-down wire structure samples, fabricated on a AlGaAs/GaAs/AlGaAs double heterostructure using a FIB, are presented. Significant decreases in luminescence in FIB exposed regions are reported. Spatial luminescence from single bottom-up GaN and ZnO nanowires deposited by metal initiated metal-organic CVD on Au and SiO2 substrates is imaged. CL spectra for GaN and ZnO, with peak intensities at 3.27 and 3.29 eV, are characterized. Finally, several suggestions for further research are offered including transport imaging on contacted bottom-up nanowires and a potential application of transport imaging to FIB damage characterization.
Type
Thesis
Description
Series/Report No
Department
Organization
Identifiers
NPS Report Number
Sponsors
National Science Foundation
Funding
DNR 20033397
Format
83 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined
in Title 17, United States Code, Section 101. As such, it is in the
public domain, and under the provisions of Title 17, United States
Code, Section 105, is not copyrighted in the U.S.