Polarized angular distributions of parametric x radiation and vacuum-ultraviolet transition radiation from relativistic electrons
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Authors
Fiorito, R.B.
Rule, D.W.
Piestrup, M.A.
Maruyama, X.K.
Silzer, R.M.
Skopik, D.M.
Shchagin, A.V.
Subjects
Advisors
Date of Issue
1995-04
Date
Publisher
American Physical Society
Language
Abstract
We present quantifiable images of the angular distribution (AO's) of parametric X radiation (PXR) and vacuum-ultraviolet transition radiation (vuv TR) from 230 MeV electrons interacting with a silicon crystal. Both AD's are highly polarized. The vuv TR and optical TR data provide measurements of the beam energy and effective divergence angle. Using these quantities and separately known values of the electronic susceptibility |Xo|, we show that the measured PXR AD is in good agreement with the predictions of single crystal theory. Our analysis suggests a method to measure |Xo| using PXR AD's.
Type
Article
Description
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Ths work was sponsored in part by DOE SBIR Grant No. DE-FG03-91er80199; NCI SBIR Grant no. 1-R43-CA60207-01 and the Canadian Natural Science and Engineering Research Council
Funder
Format
4 p., ill.
Citation
Physical Review E, v.51, no.4. April 1995, pp. R2759-R2763
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.