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Improving sensitivity and defying residual stress in MEMS bi-material terahertz sensors with metamaterial structures and self-leveling configuration

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Authors
Alves, F.
Grbovic, D.
Arruda, J.
Santos, R.
Karunasiri, Gamani
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Date of Issue
2014-08
Date
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MetaMorphose
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Abstract
In this paper we report on techniques to improve sensitivity and reduce the residual stress and its effects on THz MEMS bi-material sensors, using metamaterial structures and self-leveling configurations. Structural metamaterial films made of aluminum and silicon-rich silicon oxide bring the THz absorption close to 100% while making the absorption area relatively flat. Multi-folded bi-material and thermal insulating legs compensate the residual stress of the films, leveling the sensors, making them attractive to be used in THz imaging systems with external optical readout.
Type
Article
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Department
Physics
Organization
Naval Postgraduate School (U.S.)
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Format
3 p.
Citation
Alves, F., et al. "Improving sensitivity and defying residual stress in MEMS bi-material terahertz sensors with metamaterial structures and self-leveling configuration." 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics. IEEE, 2014.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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