Study of PbTe, PbSnTe, PbSe, PbSnSe, and Ge metal insulator semiconductor (MIS) structures
Loading...
Authors
Kost, Lawrence Michael
Subjects
Capacitive-voltage characteristics
Charge-coupled devices
Lead-tin semiconductors
MIS structures
Charge-coupled devices
Lead-tin semiconductors
MIS structures
Advisors
Tao, Tien Fan
Date of Issue
1973-03
Date
March 1973
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
A thorough understanding and a well developed fabrication procedure of MIS structures are the
prerequisite for CCD applications. The object of this thesis is to study the narrow gap
semiconductor MIS and investigate its feasibility for IR-CCI applications. Two MIS studies were
made.
First, MIS of five lead-tin semiconductors were fabricated using E-gun evaporated 100-450A thick Al(2)0(3) or Si0(2) layers as insulators. C-V measurements indicated that these MIS behave qualitatively like that of Si-MOS. Accumulation, depletion and inversion layers were controlled by the gate voltage. However, comparisons of measured C-V with theoretical calculations did not yield quantitative agreement.
Second, MIS of 0.05D-cm p-type and 40D-cm n-type Ge were also studied. C-V and C-t measurements indicated standard MOS behavior although some small hysteresis was found. Analysis based on C-V data showed that the flatband voltage was approximately -1.2 volts and interface state density
was on the order of 10(13) /cm(2).
In addition, effects of electron bombardment simulating the space environment around Jupiter on a n-channel depletion MOSFET were studied. The negative threshold voltage was deĀ
creased and at a total dose of 2Xl0(15) e/cm(2), it became positive making the MOSFET an enhancement type of very poor quality.
Type
Thesis
Description
Series/Report No
Department
Electrical Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.