Wide Bandgap Semiconductor Device With Vertical Superjunction Edge Termination for the Drift Region

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USPN 9978832.pdf (8.31 MB)
Authors
Martino, Christopher Adrian
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Date of Issue
2018-05-22
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United States Patent and Trademark Office (USPTO)
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Abstract
A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be raised.
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Patent
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https://hdl.handle.net/10945/58265
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US 9,978,832 B1
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14 p.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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