Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region
Loading...
Authors
Martino, Christopher Adrian
Subjects
Advisors
Date of Issue
2018-05-22
Date
Publisher
The Government of the United States of America, as represented by the Secretary of the Navy, Washington, DC (US)
Language
en_US
Abstract
A vertical superjunction edge termination structure for the
drift region of wide bandgap semiconductor devices that
provides a low resistance and high off voltage allowing the
breakdown voltage of the superjunction drift region to be
raised.
Type
Patent
Description
Patent
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
14 p.
Citation
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.