Optical and material properties of sandwiched Si/SiGe/Si heterostructures
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Authors
Feng, Z.C.
Yu, J.W.
Zhao, J.
Yang, T.R.
Karunasiri, R.P.G.
Lu, W.
Collins, W.E.
Subjects
SiGe
MOCVD
XRD
Raman
FTIR
RBS
SIMS
MOCVD
XRD
Raman
FTIR
RBS
SIMS
Advisors
Date of Issue
2005-08-15
Date
Publisher
Elsevier
Language
Abstract
Si1 xGex layers sandwiched between Si were grown at low temperature of 450 -C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photo- luminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1 xGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si–O–Si from the oxidation on surface and Si–H due to the hydrogenization during growth.
Type
Article
Description
The article of record as published may be found at https://doi.org/10.1016/j.surfcoat.2005.07.027
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
National Science Council of Republic of China
Funder
NSC 93-2218-E002-011
NSC 93-2215-E-002-035
NSC 93-2215-E-002-035
Format
5 p.
Citation
Feng, Z. C., et al. "Optical and material properties of sandwiched Si/SiGe/Si heterostructures." Surface and Coatings Technology 200.10 (2006): 3265-3269.
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.