Electrical and thermal analysis of gallium nitride HEMTs
Authors
Wang, Yuchia.
Subjects
Advisors
Weatherford, Todd R.
Date of Issue
2009-06
Date
Publisher
Monterey, California: Naval Postgraduate School
Language
Abstract
The purpose of this thesis was to build a transient model and to study the electrical and thermal characteristics of the AlGaN/GaN HEMT. We first used Method 3104 of MIL-STD 750D to determine the location of HEMT structure that gate voltage measurement relates to. Secondly, we investigated the performance of single pulse and multiple pulses. Thirdly, we studied and compared the performance between the DC model and the Transient model (multiple pulses) with the same power. Finally, we compared the self-heating effect between various substrates and discussed the observation of unique transistor heating. Based on the analysis of these simulation results, we would be able to predict the performance of the AlGaN/GaN HEMT.
Type
Thesis
Description
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
xviii, 89 p. : ill. ;
Citation
Distribution Statement
Approved for public release; distribution is unlimited.