Spatial mapping of the mobility-lifetime(Î¼Ï ) product in cadmium zinc telluride nuclear radiation detectors using transport imaging
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Authors
Young, Peter J., Jr.
Subjects
Transport Imaging
Cathodoluminescence
Mobility-Lifetime () Product
Cadmium Zinc Telluride
CZT
Spatial Variation
Cathodoluminescence
Mobility-Lifetime () Product
Cadmium Zinc Telluride
CZT
Spatial Variation
Advisors
Haegel, Nancy
Frenzen, Chris
Date of Issue
2013-06
Date
Jun-13
Publisher
Monterey, California: Naval Postgraduate School
Language
Abstract
Cadmium zinc telluride (Cd1-xZnxTe) is an important material for room temperature nuclear radiation detectors due to its high stopping power for gamma rays combined with its good electron transport. However, CdZnTe crystals are susceptible to growth defects such as grain boundaries, twin boundaries, and tellurium (Te) inclusions which can compromise desirable energy resolution and electron/hole charge collection properties. The presence of these defects ultimately degrades the effectiveness of the nuclear radiation detector material. The ability to map electron and hole transport properties at high spatial resolution can provide new insight into the roles of individual defects. Experimentally, this study employs high-resolution (< 5m) transport imaging to explore the effect of localized crystal defects on the spatial variation of carrier transport properties. The ambipolar diffusion length (Ld) and associated free carrier mobility-lifetime () product are determined by imaging the recombination luminescence from carriers generated by an electron beam. Localized defects often are marked by regions of low intensity luminescence. At the same time, we observe increasing ambipolar diffusion length in the region immediately surrounding the defects. One explanation is that the gettering of point defects, such as interstitials and vacancies, associated with the formation of microscopic precipitates results in localized increases in the product. Initial results indicate that these variations occur over a region extending ~ 10 m from the edge of the inclusion. Mathematically, this study employs the minority carrier diffusion equation to model the 3D diffusion of free charge carriers away from a point source. A non-linear least squares program using exact methods and asymptotic expansion methods is then used to fit this model to transport data imagery. The ambipolar diffusion length (Ld) and associated free carrier mobility-lifetime () is then determined from the scanned portion of the sample. A plot of diffusion length versus position is also revealed, which depicts the samples spatial variation of carrier transport properties. .
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Description
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Department
Physics
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NPS Report Number
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Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.