TRAP CHARACTERIZATION IN HIGH FIELD, HIGH TEMPERATURE STRESSED GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS

Abstract

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) offer higher power output over existing technology. However, issues such as current collapse and kink effect hinder GaN HEMTs performance. The degraded performance is linked to traps within the device. Capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed on commercially available GaN-on-Si to characterize traps before and after high field, high temperature stressed conditions. The results revealed the devices had less gate current leakage after stressing and the C-V characteristics changed dramatically after a 24 hour recovery period.