Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells
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Authors
Michael, Sherif
Cypranowski, Corinne
Anspaugh, Bruce
Subjects
ANNEALING
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
RADIATION DAMAGE
SOLAR CELLS
VOLT-AMPERE CHARACTERISTICS
CARRIER INJECTION
ELECTRON IRRADIATION
MINORITY CARRIERS
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
RADIATION DAMAGE
SOLAR CELLS
VOLT-AMPERE CHARACTERISTICS
CARRIER INJECTION
ELECTRON IRRADIATION
MINORITY CARRIERS
Advisors
Date of Issue
1990-01
Date
Jan 01, 1990
Publisher
Language
Abstract
The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.
Type
Conference Paper
Description
SEE A91-41876
21st IEEE Photovoltaic Specialists Conference; May 21-25, 1990; Kissimmee, FL; United States
21st IEEE Photovoltaic Specialists Conference; May 21-25, 1990; Kissimmee, FL; United States
Series/Report No
Department
Organization
Jet Propulsion Laboratory
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NPS Report Number
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Funder
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Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.