In-situ testing of radiation effects on VLSI capacitors using the NPS linear accelerator
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Authors
Salsbury, Duane
Subjects
Radiation effects on electronic devices
Total dose radiation effects
Naval Postgraduate School
Total dose radiation effects
Naval Postgraduate School
Advisors
Michael, Sherif
Date of Issue
1996-12
Date
December 1996
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
The study of radiation effects on VLSI components is a very heavily researched topic. There are several reasons for this research, one of which is the application of VLSI components to space related vehicles. One component essential to Analog VLSI elements is the capacitor. The purpose of this paper is to better define the actual effects of radiation on the MOS VLSI capacitor. The radiation testing is conducted using the NPS electron linear accelerator. The data is taken while the capacitor is being exposed to an accumulating dose of electron radiation. The capacitance values are monitored using the parameter changes of a specially designed low pass filter circuit. The 3 dB breakpoint frequency of this filter is used to calculate the actual capacitance. The capacitance value is then related to the accumulated radiation dose in Rads. The results are very important and needed, especially if off-the-shelf components are to be utilized in the design of spacecraft systems.
Type
Thesis
Description
Series/Report No
Department
Department of Electrical and Computer Engineering
Organization
Naval Postgraduate School
Identifiers
NPS Report Number
Sponsors
Funder
Format
xi, 97 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.