Radiation effects on multi-junction solar cells
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Authors
Fifer, Tommy L.
Subjects
Advisors
Michael, Sherif
Date of Issue
2001-12
Date
Publisher
Monterey, California. Naval Postgraduate School
Language
Abstract
The GaInP2/GaAs/Ge monolithic high efficiency triple junction cell is the state of the art multi-junction solar cell for space applications. Numerous labs have undertaken investigation into the stability of GaInP2/GaAs/Ge in response to electron radiation. Electron radiation experiments have shown that the degradation of GaInP2/GaAs/Ge solar cells is mainly caused by a decrease of the short circuit current (ISC). The investigation and interpretation of the damage mechanism from electron irradiation in Spectrolab.s GaInP2/GaAs/Ge triple junction cell is the purpose of this thesis. Current voltage characteristics were measured to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).
Type
Thesis
Description
Series/Report No
Department
Electrical Engineering
Organization
Identifiers
NPS Report Number
Sponsors
Funding
Format
xix, 69 p. ;
Citation
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.