Microwave detection with single-band metamaterials for high power microwave weapons

Abstract

As the development of high power microwaves (HPM) continues, the potential threat to electronic systems increases. The use of metamaterials' (MM) unique characteristics has the capability to be a countermeasure against HPM weapons as shielding for electronic systems. This thesis continues to explore the use of MMs as a countermeasure by studying the integration of field effect transistors (FET) with metal/dielectric/metal MM as a method of detection. The effects on the MM absorption profile were examined with the integration of FETs. The behavior of the FETs was also examined at the MM resonant frequency. Finite element simulations and experiments, which introduced electromagnetic (E&M) fields onto the MM board, were used to conduct the analysis. Simulations demonstrated that FETs have the potential to shift the resonant frequency to the left and generate an electric potential at the resonant frequency. The experimental board resonant frequency did not shift due to the limited number of FETs on the board. We conclude that further work for MM board detection of HPM weapons, with exposure of MM boards to megawatt radiation of higher frequency, is required.