Single Event Induced Voltage Transients within lnP HBT Circuits

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Weatherford_Single_Event_2000.pdf (786.39 KB)
Authors
Weatherford, T.R.
Whitaker, J.
Meyer, S.
Bustamante, M.
Thomas, S. III
Elliott, K.
Advisors
Second Readers
Subjects
Date of Issue
2000
Date
2000
Publisher
Language
Abstract
Voltage transients internal to an InP HBT integrated circuit are measured with picosecond resolution. Results show that the single event "shorts" the transistor terminals and the transient response can produce multiple errors at gigahertz frequencies.
Type
Conference Paper
Description
URI
https://hdl.handle.net/10945/48891
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funding
Format
4 p.
Citation
Weatherford, T. R., et al. "Single event induced voltage transients within InP HBT circuits." Government Microcircuit Applications Conference (GOMAC 2000), Digest of Papers. 2000.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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