A computer study of channeling in silicon
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Authors
Finno, Roy Stephen
Subjects
Silicon, channeling
Electronic stopping cross-section xenon is (100) channel of silicon
Potential functions silicon-silicon
Potential functions xenon-silicon
Electronic stopping cross-section xenon is (100) channel of silicon
Potential functions silicon-silicon
Potential functions xenon-silicon
Advisors
Harrison, Don E., Jr.
Date of Issue
1969-06
Date
June 1969
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
A computer simulation study of channeling in a diamond Lattice. The simulation was done for a xenon ion striking the (100), (100) or (111) surface of a silicon target. Potential functions for the Si-Si lattice bond and the Xe-Si interaction are postulated. the electronic stopping cross section for the (100)channel of silicon is estimated. This work is a continuation in the development of a computer model formulated at the USNPGS which takes into consideration the displacement of the atoms in the target lattice as well as inelastic energy losses by the primary ion. The lattice was not thermalized and only the repulsive portion of the lattice-lattice potential was utilized. Computer ranges are in good agreement with experimental data.
Type
Thesis
Description
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.