Simulation of double barrier resonant tunneling diodes
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Authors
Porter, Roy M.
Subjects
quantum physics
resonant tunneling
nanoelectronics
diodes
resonant tunneling
nanoelectronics
diodes
Advisors
Luscombe, James
Cleary, David
Date of Issue
1996-06
Date
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporated
Type
Thesis
Description
Series/Report No
Department
Applied Physics
Organization
Identifiers
NPS Report Number
Sponsors
Funding
Format
35 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.