Simulation of double barrier resonant tunneling diodes

dc.contributor.advisorLuscombe, James
dc.contributor.advisorCleary, David
dc.contributor.authorPorter, Roy M.
dc.contributor.departmentApplied Physics
dc.date.accessioned2012-08-09T19:23:40Z
dc.date.available2012-08-09T19:23:40Z
dc.date.issued1996-06
dc.description.abstractThe double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporateden_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.
dc.description.serviceLieutenant, United States Navyen_US
dc.description.urihttp://archive.org/details/simulationofdoub109458963
dc.format.extent35 p.en_US
dc.identifier.urihttps://hdl.handle.net/10945/8963
dc.language.isoen_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.subject.authorquantum physicsen_US
dc.subject.authorresonant tunnelingen_US
dc.subject.authornanoelectronicsen_US
dc.subject.authordiodesen_US
dc.titleSimulation of double barrier resonant tunneling diodesen_US
dc.typeThesisen_US
dspace.entity.typePublication
etd.thesisdegree.disciplineApplied Physicsen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.nameM.S. in Applied Physicsen_US
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