Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films
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Authors
Bolakis, C.
Grbovic, D.
Lavrik, N.V.
Karunasiri, G.
Advisors
Second Readers
Subjects
Far infrared or terahertz
Absorption
Thin films
optical properties
Absorption
Thin films
optical properties
Date of Issue
2010-07
Date
Publisher
Optical Society of America
Language
Abstract
A terahertz-absorbing thin-film stack, containing a dielectric Bragg reflector and a thin chromium metal film, was fabricated on a silicon substrate for applications in bi-material terahertz (THz) sensors. The Bragg reflector is to be used for optical readout of sensor deformation under THz illumination. The THz absorption characteristics of the thin-film composite were measured using Fourier transform infrared spectroscopy. The absorption of the structure was calculated both analytically and by finite element modeling and the two approaches agreed well. Finite element modeling provides a convenient way to extract the amount of power dissipation in each layer and is used to quantify the THz absorption in the multi-layer stack. The calculation and the model were verified by experimentally characterizing the multi-layer stack in the 3-5 THz range. The measured and simulated absorption characteristics show a reasonably good agreement. It was found that the composite film absorbed about 20% of the incident THz power. The model was used to optimize the thickness of the chromium film for achieving high THz absorption and found that about 50% absorption can be achieved when film thickness is around 9 nm.
Type
Article
Description
Series/Report No
Department
Organization
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NPS Report Number
Sponsors
Funding
The work is supported in part by a grant from the AFOSR.
Format
Citation
Optics Express, Volume 18, No. 14, pp. 14488-14495 (5 July 2010)
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
