Transport imaging for the study of quantum scattering phenomena in next generation semiconductor devices

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Authors
Bradley, Frank Mitchell
Subjects
Minority carrier diffusion length
heterostructure bipolar transistors
transport imaging
heavily doped GaAs transport properties
Advisors
Haegel, Nancy M.
Date of Issue
2005-12
Date
Publisher
Monterey, CA; Naval Postgraduate School
Language
Abstract
The minority carrier diffusion length is a critical parameter in the development of next generation Heterostructure Bipolar Transistors (HBT) and highly efficient solar cells. A novel technique has been developed utilizing direct imaging of electron/hole recombination via an optical microscope and a high sensitivity charge coupled device coupled to a scanning electron microscope to capture spatial information about the transport behavior (diffusion lengths/drift lengths) in luminescent solid state materials. In this work, a numerical model was developed to do a multi-parameter least squares analysis of transport images. Results were applied to the study of transport in materials at the forefront of device technology that are affected by quantum scattering effects, where few reliable experimental measurements exist. The technique allows for easy localization of the measurement site, broad application to a range of materials and potential industrial automation to aid electronics for terahertz devices.
Type
Thesis
Description
URI
https://hdl.handle.net/10945/1851
Series/Report No
Department
Organization
Identifiers
NPS Report Number
Sponsors
National Science Foundation
Funder
DMR 20033397
Format
113 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined
in Title 17, United States Code, Section 101. As such, it is in the
public domain, and under the provisions of Title 17, United States
Code, Section 105, is not copyrighted in the U.S.
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