Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate
Loading...
Authors
Mei, T.
Li, H.
Karunasiri, G.
Fan, W.J.
Zhang, D.H.
Yoon, S.F.
Yuan, K.H.
Subjects
Infrared photodetector
Quantum well
Intersubband transition
Quantum well
Intersubband transition
Advisors
Date of Issue
2007
Date
Publisher
Elsevier
Language
Abstract
p-type quantum-well infrared photodetectors (QWIPs) demonstrate normal incidence response due to band mixing by utilizing valence band transitions that may break the selection rule limiting n-type QWIPs. Due to even more complicated valence band structure in (1 1 1) orientation, it is interesting to see that the p-type QWIP show both absorption and photocurrent response dominant in normal incidence. The p-type GaAs/AlGaAs QWIP was fabricated on GaAs(1 1 1)A substrate by molecular beam epitaxy (MBE) using silicon as dopant with a measured carrier concentration of 1.4 ยท 1018 cm 3. The photocurrent spectrum exhibits a peak at a wavelength of 7 lm with a relatively broad peak width (Dk/kp 50%), indicating that the final state is far deep within the continuum of the valence band. The p-QWIP demonstrates a responsivity of about 1 mA/W, which is limited by the relatively low doping concentration.
Type
Article
Description
The article of record as published may be found at https://doi.org/10.1016/j.infrared.2006.10.025
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funding
Format
Citation
Mei, T., et al. "Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1) A substrate." Infrared physics & technology 50.2-3 (2007): 119-123.
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.