SEE analysis of digital InP-based HBT circuits at gigahertz frequencies

dc.contributor.authorWeatherford, Todd R.
dc.contributor.authorSchiefelbein, Peter K.
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.date.accessioned2016-05-26T21:51:06Z
dc.date.available2016-05-26T21:51:06Z
dc.date.issued2001-12
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1109/23.983160en_US
dc.descriptionIEEE Transactions on Nuclear Science, V. 48, No. 6, pp. 1980-1986, December 2001
dc.description.abstractA device/circuit simulation is used to analyze a gigahertz clocked emitter-coupled logic circuit being perturbed by a single event. Results provide an understanding of charge collection in the heterojunction bipolar transistor. A technique for single-event hardening is demonstrated by simulation.en_US
dc.identifier.urihttps://hdl.handle.net/10945/48745
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.subject.authorHeterojunction bipolar transistorsen_US
dc.subject.authorIndium phosphide integrated circuitsen_US
dc.subject.authorRadiation effectsen_US
dc.subject.authorSingle-event effects (SEEs)en_US
dc.titleSEE analysis of digital InP-based HBT circuits at gigahertz frequenciesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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