Evaluation of ferroelectric materials for memory applications
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Authors
Josefson, Carl Elof
Subjects
Ferrorelectric
nonvolatile memory
radiation hard
nonvolatile memory
radiation hard
Advisors
Panholzer, R.
Date of Issue
1990-06
Date
June 1990
Publisher
Monterey, California: Naval Postgraduate School
Language
Abstract
Ferroelectric materials have wide application in area such as piezoelectric transducers, pyroelectric detectors, and electro-optics, and now thin-film ferroelectric materials are being integrated with conventional semiconductor processes to produce memory devices. Memories based on this technology potentially offer nonvolatile data storage and extended read-write endurance in comparison with EEPROMs, without speed or power penalties. These memories are also radiation hard. Considerable interest in ferroelectric memory exists in the Department of Defense (DOD) because of these characteristics. However, several problems remain unsolved and no memory devices have been produced as yet. The physical mechanisms (as they are understood) are discussed, the claims made for the technology are examined, and the potential roadblocks, such as: cycle dependent fatigue, time dependent degradation of memory retention, and fabrication problems are evaluated.
Type
Thesis
Description
Series/Report No
Department
Department of Electrical and Computer Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
ix, 88 p. ill.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.