Single event upsets in gallium arsenide pseudo-complementary MESFET logic
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Authors
Fouts, D.J.
Wolfe, K.
Van Dyk, S.E.
Weatherford, T.R.
McMorrow, D.
Melinger, J.S.
Tran, L.H.
Campbell, A.B.
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1995-12-01
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Abstract
An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL.
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Article
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The article of record as published may be found at https://doi.org/10.1109/23.488786
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Journal Name: IEEE Transactions on Nuclear Science; Journal Volume: 42; Journal Issue: 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.