Calculation of surface binding energies by computer simulation of the sputtering process
Authors
Johnson, John Palmer, III
Advisors
Harrison, Don E., Jr.
Second Readers
Subjects
Sputtering
Surface binding energy
Computer simulation
Surface binding energy
Computer simulation
Date of Issue
1966-05
Date
May 1966
Publisher
Language
en_US
Abstract
Sputtering of monocrystalline copper, a face-centered cubic, was investigated by computer simulation techniques using the Born-Mayer potential . Normally incident argon ions were shot into the (111), (110), and (100) orientations at various energies. Qualitatively correct
deposit patterns were obtained for all orientations. Surface irregularities were found to play a significant role in the sputtering mechanism. Approximate values for the surface atom binding energy on the (111) and (110) orientations were 2.25 eV and 3.0 eV, respectively.
Type
Thesis
Description
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funding
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
