Low temperature (LT) grown GaAs buffer layers for III-V semiconductor processes

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Weatherford_Low-Temperature(LT)_1999.pdf (354.22 KB)
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Weatherford, T.R.
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1999
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IEEE
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Abstract
Low Temperature Grown (LTG) GaAs buffers have been shown to eliminate backgating, reduce subthreshold leakage, provide ultrashort carrier lifetimes [I], and radiation hardness [2]. However, undoped LTG buffers have shown poor reliability, poor RF performance [3], and inconsistent lot-to-lot properties. Recent p-doped LT GaAs buffers promise thermally stable material to withstand changes during annealing steps, plus improved performance over undoped LT GaAs buffers.
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Article
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The article of record as published may be found at http://dx.doi.org/10.1109/GAAS.1999.803724
21st Annual GaAs IC Symposium, 17-20 October 1999, pp. 47-50, Monterey, CA, USA
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https://hdl.handle.net/10945/48740
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Electrical and Computer Engineering
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Naval Postgraduate School (U.S.)
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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