SEU design consideration for MESFETs on LT GaAs

dc.contributor.authorWeatherford, T.R.
dc.contributor.authorRadice, R.
dc.contributor.authorEskins, D.
dc.contributor.authorDevers, J.
dc.contributor.authorFouts, D.J.
dc.contributor.authorMarshall, P.W.
dc.contributor.authorMarshall, C.J.
dc.contributor.authorDietrich, H.
dc.contributor.authorTwigg, M.
dc.contributor.authorMilano, R.
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.date.accessioned2019-01-23T21:36:12Z
dc.date.available2019-01-23T21:36:12Z
dc.date.issued1997-12-01
dc.descriptionThe article of record as published may be found at http://dx.doi.org/101109/23.659047
dc.description.abstractComputer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.en_US
dc.identifier.citationJournal Name: IEEE Transactions on Nuclear Science; Journal Volume: 44; Journal Issue: 6Pt1; Conference: 34. IEEE nuclear and space radiation effects conference, Snowmass, CO (United States), 21-25 Jul 1997; Other Information: PBD: Dec 1997en_US
dc.identifier.otherOSTI ID: 644220
dc.identifier.otherCONF-970711-
dc.identifier.urihttps://hdl.handle.net/10945/60987
dc.language.isoen_US
dc.publisherIEEE
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.subject44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORSen_US
dc.subjectCOMPUTERIZED SIMULATIONen_US
dc.subjectERRORSen_US
dc.subjectCHARGE COLLECTIONen_US
dc.subjectPHYSICAL RADIATION EFFECTSen_US
dc.subjectFIELD EFFECT TRANSISTORSen_US
dc.subjectGALLIUM ARSENIDESen_US
dc.subjectDESIGNen_US
dc.titleSEU design consideration for MESFETs on LT GaAsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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