A report on the effects of neutron irradiation on GaAs semiconductors
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Authors
Callahan, John K.
Subjects
GaAs MHICs
Carrier concentration
Mobility
Carrier concentration
Mobility
Advisors
Neighbours, John R.
Anderson, W.T.
Date of Issue
1987-06
Date
June 1987
Publisher
Language
en_US
Abstract
the effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.
Type
Thesis
Description
Series/Report No
Department
Department of Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
42 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.