A report on the effects of neutron irradiation on GaAs semiconductors

Simple item page
dc.contributor.advisorNeighbours, John R.
dc.contributor.advisorAnderson, W.T.
dc.contributor.authorCallahan, John K.
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.contributor.departmentDepartment of Physics
dc.dateJune 1987
dc.date.accessioned2012-11-27T00:23:59Z
dc.date.available2012-11-27T00:23:59Z
dc.date.issued1987-06
dc.description.abstractthe effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.en_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.
dc.description.serviceLieutenant Commander, United States Navyen_US
dc.description.urihttp://archive.org/details/areportoneffects1094522457
dc.format.extent42 p.en_US
dc.identifier.urihttps://hdl.handle.net/10945/22457
dc.language.isoen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.subject.authorGaAs MHICsen_US
dc.subject.authorCarrier concentrationen_US
dc.subject.authorMobilityen_US
dc.subject.lcshPhysicsen_US
dc.titleA report on the effects of neutron irradiation on GaAs semiconductorsen_US
dc.typeThesisen_US
dspace.entity.typePublication
etd.thesisdegree.disciplinePhysicsen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.nameM.S. in Physicsen_US
Files
Collections
Theses