An approach for studying the creep/sliding behavior of planar metal-silicon interface

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Authors
Farsaris, Ioannis
Subjects
Composite
Planar interface
Interfacial sliding
Creep
Advisors
Dutta, Indranath
Date of Issue
1999-12-01
Date
December 1999
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
There has been considerable recent interest in interfacial sliding during creep of multi-phase materials. The effect of interfacial creep is crucial for the deformation of metal-matrix composites and thin film systems, where the isostrain condition between the constituent components is often violated. An experimental approach has been developed to investigate the deformation kinetics of planar interfaces, using a double-shear specimen geometry where the interfaces are loaded in shear. In addition to shear stresses, the apparatus is capable of applying normal stresses (tension or compression) on the interface. In the experimental arrangement, the relative displacements of the constituents at the top and bottom of the specimen are measured independently with high precision using a resistance gauge and a capacitance sensor, respectively. The experimental set-up is suitable for both constant displacement-rate and constant-load creep tests, and can be operated up to a temperature of 300 deg C. In the current study, preliminary creep tests were conducted on planar aluminum-silicon interfaces prepared by diffusion bonding in argon atmosphere at 565 deg C. During the tests, the interfaces were subjected to nominally constant shear stresses ranging from 0.8-2 MPa, with the test temperatures ranging from 100-200 deg C. In all cases, the interface was found to slide via a time-dependent relaxation mechanism, indicating the suitability of the proposed test for studying interfacial sliding. Further studies are needed to determine the mechanistic details of interfacial sliding.
Type
Thesis
Description
Series/Report No
Department
Mechanical Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
ix, 55 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
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Copyright is reserved by the copyright owner
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