Characterization and application of four-layer semiconductor structures in pulse mode operation
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Authors
Matos, Antonio P.
Subjects
Advisors
Karunasiri, Gamani
Luscombe, James H.
Date of Issue
2006-09
Date
Publisher
Monterey, California. Naval Postgraduate School
Language
Abstract
The characteristics and application of a thyristor (a four-layer semiconductor structure) in a pulse generating circuit are explored. A thyristor device was used to create a pulse generating circuit and the pulse interval duration of this circuit was experimentally measured. The pulse interval duration was determined to be characterized by a Poisson Point Process distribution that is dependent on both temperature and applied voltage bias. The adjustable aperiodicity of the pulse intervals was a key characteristic used to design a distributed processing system of micro-robots that are capable of swarming. A micro-robotic swarm platform was simulated using finite element analysis, a JAVA-based swarm model, and three fully operational macro-scale platforms.
Type
Thesis
Description
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
xvi, 71 p. : ill. (some col.) ;
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined
in Title 17, United States Code, Section 101. As such, it is in the
public domain, and under the provisions of Title 17, United States
Code, Section 105, is not copyrighted in the U.S.