Publication:
CURRENT AND TEMPERATURE SENSING VIA LIGHT EMISSION FROM GAN PN JUNCTIONS

dc.contributor.advisorWeatherford, Todd R.
dc.contributor.advisorPorter, Matthew A.
dc.contributor.authorBroeg, Maeve A.
dc.contributor.departmentElectrical and Computer Engineering (ECE)en_US
dc.dateJune 2019
dc.date.accessioned2023-02-22T17:52:50Z
dc.date.available2023-02-22T17:52:50Z
dc.date.issued2019-06
dc.description.abstractWith the growing complexity of high-power converters, it has never been more important to have accurate sensors for optimal control and stability. With significantly better power handling than silicon materials, bulk gallium nitride–based devices can withstand high voltages and current while simultaneously emitting a unique light spectrum, the characteristics of which are a function of the current and temperature of the device. Using bulk GaN PN junctions, preliminary measurements of the emitted light showed a distinct multi-peak spectrum corresponding to excitonic and impurity-assisted optical processes. Optical filters and photodiodes are utilized to measure the light intensity of each spectral peak for up to 5 A applied current at a temperature range of 20 °C – 100 °C. Linear polynomial models fitted to the filter output show a strong relationship between the light intensity, current, and temperature, as well as a significant energy shift in light emitted through exciton annihilation. The experimental data is then used to fit a linear polynomial model estimating current from temperature and filter output. Mean errors of 2.5%, 2.7%, and 3.7% are achieved for three of the four current models. Recommendations are made for future work in utilizing the sensor data for real-time current and temperature measurements.en_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.en_US
dc.description.serviceEnsign, United States Navyen_US
dc.identifier.urihttps://hdl.handle.net/10945/71601
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.subject.authorbulk GaNen_US
dc.subject.authorpower convertersen_US
dc.subject.authorexcitonic emissionen_US
dc.subject.authorimpurity donor-acceptor recombinationen_US
dc.titleCURRENT AND TEMPERATURE SENSING VIA LIGHT EMISSION FROM GAN PN JUNCTIONSen_US
dc.typeThesisen_US
dspace.entity.typePublication
etd.thesisdegree.disciplineElectrical Engineeringen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.nameM.S. in Electrical Engineeringen_US
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