Ferroelectric memory devices and a proposed standardized test system design
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Authors
Covelli, Javier M.
Subjects
Current memory
Ferroelectric capacitor
Stress measurement system
Standardized test system
Ferroelectric capacitor
Stress measurement system
Standardized test system
Advisors
Panholzer, Rudolf
Date of Issue
1992-06
Date
June 1992
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
Ferroelectric bulk material devices have been in existence for over 20 years, Not until recently has there been fabrication techniques that consistently and feasibly produce thin film ferroelectric materials. The physical characteristics of thin-film ferroelectric capacitors and their subsequent integration into memory design may prove ferroelectric devices to be the ultimate in design for non-volatile, radiation hard computer memory. This analysis describes current memory systems, some of the recent achievements in ferroelectrics and the prospects for further application of ferroelectrics and the prospects for further application of ferroelectrics as an alternative for current memory design. It explores the different testing methodologies being implemented to test ferroelectric devices and suggests a flexible, fully programmable and autonomous new test system design to allow high speed aging and fatigue testing of on-chip ferroelectric capacitors for memory applications.
Type
Thesis
Description
Series/Report No
Department
Electrical and Computer Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
124 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.