Thin-film Pb(0.9)Sn(0.1)Se photoconductive infrared detectors : photoconductivity measurements.
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Authors
Holmquist, Kurt Ervin.
Subjects
thin-film IV-VI photoconductors
Advisors
Tao, Tien Fau
Date of Issue
1972-12
Date
December 1972
Publisher
Language
en_US
Abstract
Pb(0.9)Sn(0.1)Se thin films were deposited on cleaved
CaF(2) and BaF(2) substrates by vacuum evaporation methods.
The as-deposited films were not photosensitive. Photoconductivity
was observed after the films had been isothermally
annealed in Pb-Sn rich vapor to reduce their
carrier concentrations. Blackbody (500° K) response measurements
were made to determine the responsivity and detectivity
of the thin-film samples. Blackbody responsivities as high
as 60 volts per watt were measured. Thin films with singlecrystal
(lOO)-oriented structure were more sensitive than
the films with either single-crystal (111) or polycrystalline
mixed (111) and (100) structure. The wavelengths of photoconductive
thresholds were determined by spectral response
measurement and were in good agreement with the fundamental
absorption edges. Photoconductive response times were
measured using a GaAlAs heterojunction laser diode as the
radiation source.
Type
Thesis
Description
Series/Report No
Department
Electrical Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.