Triple Junction InGaP/GaAs/Ge Solar Cell Optimization: The Design Parameters for a 36.2% Efficient Space Cell Using Silvaco ATLAS Modeling & Simulation
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Authors
Tsutagawa, Michael H.
Michael, Sherif
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Date of Issue
2009
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IEEE
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Abstract
This paper presents the design parameters for a triple
junction InGaP/GaAs/Ge space solar cell with a simulated
maximum efficiency of 36.28% using Silvaco ATLAS
Virtual Wafer Fabrication tool. Design parameters include
the layer material, doping concentration, and thicknesses.
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Article
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Electrical and Computer Engineering
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.