Publication:
30 MeV electron beam irradiation effects on GaAs1-xPxLEDS.

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Authors
Foley, James Kevin.
Subjects
LEDs
GaAs₁₋ₓPₓ
electron beam
Bremsstrahlung losses
electroluminescence
damage constant
Advisors
Dimiduk, Kathryn C.
Date of Issue
1985-06
Date
June 1985
Publisher
Language
en_US
Abstract
LEDs of the ternary alloy GaAs.7P.3 were irradiated with a 30 MeV electron beam. The effects this exposure had on peak wavelength, absolute and relative light output intensities, and current-forward bias characteristics were studied. A simple model of LED current controlling mechanisms is described and a mathematical approach for deriving a descriptive damage-constant is provided. Observed irradiation effects consisted of increased current and decreased light output intensity for a given forward bias voltage and indicate that the devices tested are an order of magnitude softer to electron radiation than results previously reported. Damage constants were calculated: group 9 (2.9 x 10ˉ¹⁴ cm²/e), group A5 (2.6 x 10ˉ¹⁴ cm²/e), and group 3 (1.4 x 10ˉ¹⁴ cm²/e). Shielded and un-shielded devices were compared to determine if the secondary electron production from Bremsstrahlung losses would reduce the total fluence required for degradation. The results of this experiment were inconclusive. A procedure was developed to determine the electron beam current density for use in dose estimations. Electron doses were a factor of three higher when compared to the previous method of calculation.
Type
Thesis
Description
Series/Report No
Department
Physics
Other Units
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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