30 MeV electron beam irradiation effects on GaAs1-xPxLEDS.
| dc.contributor.advisor | Dimiduk, Kathryn C. | |
| dc.contributor.author | Foley, James Kevin. | |
| dc.contributor.corporate | Naval Postgraduate School (U.S.) | |
| dc.contributor.department | Physics | |
| dc.contributor.secondreader | Woehler, K.E. | |
| dc.date | June 1985 | |
| dc.date.accessioned | 2012-11-26T23:59:50Z | |
| dc.date.available | 2012-11-26T23:59:50Z | |
| dc.date.issued | 1985-06 | |
| dc.description.abstract | LEDs of the ternary alloy GaAs.7P.3 were irradiated with a 30 MeV electron beam. The effects this exposure had on peak wavelength, absolute and relative light output intensities, and current-forward bias characteristics were studied. A simple model of LED current controlling mechanisms is described and a mathematical approach for deriving a descriptive damage-constant is provided. Observed irradiation effects consisted of increased current and decreased light output intensity for a given forward bias voltage and indicate that the devices tested are an order of magnitude softer to electron radiation than results previously reported. Damage constants were calculated: group 9 (2.9 x 10ˉ¹⁴ cm²/e), group A5 (2.6 x 10ˉ¹⁴ cm²/e), and group 3 (1.4 x 10ˉ¹⁴ cm²/e). Shielded and un-shielded devices were compared to determine if the secondary electron production from Bremsstrahlung losses would reduce the total fluence required for degradation. The results of this experiment were inconclusive. A procedure was developed to determine the electron beam current density for use in dose estimations. Electron doses were a factor of three higher when compared to the previous method of calculation. | en_US |
| dc.description.distributionstatement | Approved for public release; distribution is unlimited. | |
| dc.description.service | Lieutenant, United States Navy | en_US |
| dc.description.uri | http://archive.org/details/mevelectronbeami1094521127 | |
| dc.identifier.uri | https://hdl.handle.net/10945/21127 | |
| dc.language.iso | en_US | |
| dc.rights | This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. | en_US |
| dc.subject.author | LEDs | en_US |
| dc.subject.author | GaAs₁₋ₓPₓ | en_US |
| dc.subject.author | electron beam | en_US |
| dc.subject.author | Bremsstrahlung losses | en_US |
| dc.subject.author | electroluminescence | en_US |
| dc.subject.author | damage constant | en_US |
| dc.subject.lcsh | Physics | en_US |
| dc.title | 30 MeV electron beam irradiation effects on GaAs1-xPxLEDS. | en_US |
| dc.type | Thesis | en_US |
| dspace.entity.type | Publication | |
| etd.thesisdegree.discipline | Physics | en_US |
| etd.thesisdegree.grantor | Naval Postgraduate School | en_US |
| etd.thesisdegree.level | Masters | en_US |
| etd.thesisdegree.name | M.S. in Physics | en_US |
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