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Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AIGaN, and GaN/InGaN core-shell nonwires

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Authors
Baird, Lee
Ong, C.P.
Cole, R. Adam
Haegel, N.M.
Talin, A. Alec
Li, Qiming
Wang, George T.
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Date of Issue
2011
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American Institute of Physics
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Abstract
Minority carrier diffusion lengths Ld are measured for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a technique based on imaging of recombination luminescence. The effect of shell material on transport properties is measured. An AlGaN shell produces Ld values in excess of 1 m and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of Ld on diameter is observed for uncoated nanowires.
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Article
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The article of record as published may be found at http://dx.doi.org/10.1063/1.3573832
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Physics
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This work was supported by National Science Foundation under Grant No. DMR 0804527 and by a grant from the Nano-MEMS program of DARPA D. Polla, Program Manager Grant No. 61101E . The growth and structural characterization was funded by the U.S. DOE, Office of Basic Energy Sciences BES MSE Division and Sandiaâ s Solid State Lighting Science Energy Frontier Research Center, funded by DOE BES. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energyâ s National Nuclear Security Administration under Contract No. DE-AC04- 94AL85000.
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Applied Physics Letters, Volume 98, 2011.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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