Publication:
A Reliable and Manufacturable Method to Induce a Stress of GPa on a P-Channel MOSFET in High Volume Manufacturing

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Authors
Arghavani, R.
Xia, L.
Thompson, S.E.
M'Saad, H.
Mascarenhas, A.
Karunasiri, G.
Balseanu, M.
Subjects
tensile silicon
strain
strained transistors
mobility enhancement
stress
stress nitride
stress oxide
Si–Ge
Compressive silicon
Advisors
Date of Issue
2006-02
Date
Publisher
IEEE
Language
Abstract
This letter discusses a reliable and manufacturable integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond 1 mA/ m at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1109/LED.2005.862277
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Thin Films Group at Applied Materials
Funder
Format
3 p.
Citation
Arghavani, R., et al. "A reliable and manufacturable method to induce a stress of> 1 GPa on a p-channel MOSFET in high volume manufacturing." IEEE electron device letters 27.2 (2006): 114-116.
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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