Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy
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Authors
Li, H.
Mei, T.
Lantz, K.P.
Karunasiri, G.
Subjects
Advisors
Date of Issue
2004-12-01
Date
Publisher
American Institute of Physics
Language
Abstract
A lattice-matched InyGa1−yAszP1−z/InwGa1−wAsvP1−v/InxGa1−xAs asymmetric step quantum well infrared photodetector grown by low-pressure metalorganic vapor phase epitaxy (MOVPE) using N2 carrier with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) is reported. The spectral responsivity of the detector has its peak at a wavelength of 10.7 μm with a peak responsivity of 0.19 A/W under 0.8 V bias at 25 K. A maximum peak detectivity of 1.9 109 cm Hz1/2 / W was achieved under 0.6 V bias at 25 K. The measured activation energy using thermionic emission of carriers is found to be about 81 meV. This work demonstrates the fabrication of InP based quantum well infrared detectors using MOVPE with TBA and TBP sources with performance comparable to that achieved using molecular beam epitaxy.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1063/1.1810203
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
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NPS Report Number
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Nanyang Technological University of Singapore
Funder
Format
4 p.
Citation
Li, H., et al. "Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy." Journal of applied physics 96.11 (2004): 6799-6802.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.