Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

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Authors
Weatherford, T.R.
Marshall, P.W.
Marshall, C.J.
Fouts, D.J.
Mathes, B.
LaMacchia, M.
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Date of Issue
1997-12
Date
Publisher
IEEE
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Abstract
Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1109/23.659049
URI
https://hdl.handle.net/10945/48702
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Department
Electrical and Computer Engineering
Organization
Naval Postgraduate School (U.S.)
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NPS Report Number
Sponsors
U.S. Navy Space and Naval Warfare Systems
Funding
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Citation
IEEE Transactions on Nuclear Science, V. 44, No. 6, pp. 2298-2305, December 1997
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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