An experimental approach for studying creep behavior of model planar interfaces
Authors
Peterson, Keith A.
Subjects
Interface Sliding
Creep Behavior
Diffusion Bonding
Creep Behavior
Diffusion Bonding
Advisors
Dutta, Indranath
Date of Issue
2000-06
Date
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
An apparatus for measuring the steady state creep behavior of interfaces in aluminum-silicon-aluminum multilayered specimens has been assembled. In the experiment scheme, a double-shear specimen geometry was used to load the interfaces in a state of nominally constant shear. The deformation kinetics for interfacial sliding during constant shear stress creep experiments were measured for various applied interfacial shear Stress levels and temperatures. Interfacial shear strain rates were measured using displacement and capacitance gauges. The planar interfaces between the aluminum and silicon layers were prepared by diffusion bonding. Preliminary results indicate that that interfacial sliding occurs via time-dependent relaxation mechanisms and that there is a threshold stress for interfacial sliding, in agreement with previous work on lead-Quartz and lead- nickel interfaces
Type
Thesis
Description
Series/Report No
Department
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NPS Report Number
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Format
xiv, 43 p.;28 cm.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.