Investigation of the Gunn effect in gallium arsenide
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Authors
Slepicka, Alois Allen
Subjects
Advisors
Sackman, George L.
Date of Issue
1966-05
Date
Publisher
Monterey, California. U.S. Naval Postgraduate School
Language
en_US
Abstract
When the electric field in certain compound semiconductors
exceeds a well-defined threshold value, the electrical current
through the material becomes unstable. These instabilities may
take the form of coherent Oscillations at microwave frequencies.
The oscillations are not greatly affected by external
circuit conditions. The effect was first discovered in gallium
arsenide and indium phosphide by J. B. Gunn in 1963, and is
now referred to as the "Gunn effect".This paper discusses
some of the practical aspects of the Gunn effect in gallium
arsenide. A brief theoretical explanation is given, of the
intervalley electron energy transfer mechanism which is now
generally accepted as the mechanism through which the effect
occurs. The preparation of samples is described, and the nature
of the electrical contacts to the material discussed. Ohmic
contacts are necessary to prevent junction effects or carrier
injection from masking the oscillations. Mounting techniques
are described. Circuit considerations are discussed, and the
results of various measurements reported. The value of the
Gunn effect lies in its potential to directly convert pulse or
DC power into microwave power, at frequencies and power levels higher than is possible with other semiconductor devices,
and at reasonable efficiencies.
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Thesis
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.