Power recovery of radiation damaged MOCVD grown indium phosphide on silicon solar cells through argon-ion laser annealing
Loading...
Authors
Boyer, Lynn L., IV
Subjects
Indium Phosphide
Solar Cells
Annealing
Lasers
Solar Cells
Annealing
Lasers
Advisors
Michael, Sherif
Date of Issue
1996-06
Date
June 1996
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells..
Type
Thesis
Description
Series/Report No
Department
Department of Electrical and Computer Engineering
Organization
Naval Postgraduate School
Identifiers
NPS Report Number
Sponsors
Funder
Format
133 p.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.