A study of effects of high energy electron radiation on selected electronic devices.
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Authors
Lane, Thomas Francis
Subjects
radiation damage
Jupiter
linear accelerator
Jupiter
linear accelerator
Advisors
Dyer, John N.
Dally, Edgar B.
Date of Issue
1972-06
Date
June 1972
Publisher
Monterey, California. Naval Postgraduate School
Language
en_US
Abstract
This study investigates the behavior of TTL NAND Gates
(Signetics SE480Q) and MOS Field Effect Transistors (2N4067)
in an electron radiation environment (produced by the Naval
Postgraduate School Linear Accelerator).
The electron radiation within two planetary radii of Jupiter is estimated to be of the order of 5 X 10⁷ electrons
per square centimeter per second. The "Grand Tour" outer
planets space probe was to spend about ten hours in this environment thus receiving an exposure of about 2 X 10¹² eˉ/cm².
Exposures of about 10¹⁵ eˉ/cm² for TTL NAND Gates and 10¹⁴eˉ/cm² for the MOSFETS were required before failure or serious degradation of performance occurred. Therefore, in the electron environment near Jupiter, satisfactory operation should be expected for about 500 hours for the MOSFETS and 5000 hours for the TTL NAND Gates.
Type
Thesis
Description
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funding
Format
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.