NEUTRON IRRADIATION EFFECTS AND APPLICATION OF JUNCTION TERMINATION EXTENSION ON GAN SCHOTTKY DIODES
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Authors
Maniego, Ember S.
Subjects
GaN
Schottky diodes
edge termination
junction termination extension
breakdown voltage
fast neutrons
radiation
power device
Schottky diodes
edge termination
junction termination extension
breakdown voltage
fast neutrons
radiation
power device
Advisors
Weatherford, Todd R.
Grbovic, Dragoslav
Date of Issue
2024-09
Date
Publisher
Monterey, CA; Naval Postgraduate School
Language
Abstract
GaN is a semiconductor material being considered for power electronics application due to the wide band gap, high critical electric field, and high electron mobility. Radiation hardness of GaN power devices against neutrons was examined via technology computer-aided design (TCAD) models in two steps. First, the forward bias characteristics of experimental bulk GaN Schottky barrier diodes (SBD) utilizing Rhenium (Re) as the Schottky contacts were simulated after fast neutron (1 MeV) irradiation. It was found that the device begins a rapid degradation in performance at neutron fluences of greater than 1x1015 cm-2. Next, GaN SBDs with junction termination extension (JTE) were designed and optimized versus the JTE dose (Na·tJTE) via simulation for a range of drift region designs with varying breakdown voltages (BVs). Single, double and triple-zone JTE edge termination designs were considered for optimization. Double and triple-zone JTEs allow the SBDs to reach greater than 90% of the planar BVs. Fast neutron irradiation of the devices was simulated over a range of neutron doses up to 1x1015 cm-2. The performance of the SBD structure each with JTE design was compared using Baliga’s Figure of Merit (BFOM) as a function of neutron dose. It was found that BV, generally, increased with neutron dose due to an increase in drift region resistance. These results show the importance of end-of-life performance considerations when designing GaN power devices for high radiation environments.
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Thesis
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Department
Electrical and Computer Engineering (ECE)
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Distribution Statement A. Approved for public release: Distribution is unlimited.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.