Electrical resistivity and Hall effect of cuprous sulfide and bismuth telluride in the temperature range from 290K to 670K.
Erickson, Philip W.
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An instrumentation and experimental technique for the measurements of electrical resistivity and the Hall effect at elevated temperatures is described. These two temperature-dependent properties are uniquely determined for non-isothermal conditions and thereby are evaluations at computed average temperatures within the specimens. The results of this investigation of cuprous sulfide and bismuth telluride in the temperature range from 290°K to 670°K are presented and compared with known published data. Resistivities are determined from measurements of potential differences between selected points along the current path through the specimens, while Hall effects are presented in terms of the Hall coefficient, R(H⁹), evaluated by Hall's equation, V(h)=R(h)IH/d. Both cuprous sulfide and bismuth telluride show resistivities on the order of 10ˉ³ ohm centimeters, characteristic of semiconductor materials, while the Hall coefficient for cuprous sulfide is established at values less than 0.179 cubic centimeters per coulomb, and the Hall coefficient for bismuth telluride decreases continuously with increasing temperature from about 0.5 cubic centimeters per coulomb. The instrumentation and investigation was conducted at the U.S. Naval Postgraduate School, Monterey, California, during the winter and spring of 1961.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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