Infrared scattering by silicon crystals.
Wagner, David F.
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Incoherent infrared scattering of silicon is reviewed and scattering from a crystal grown along a <^110^>- axis has been examined. It is concluded that the incoherent infrared scattering arises from regions in the cyrstal bounded by dislocation loops. The observed radii of cyration of the scattering regions, — 5 ix , agree with the size of dislocation loops which are observed using Dash's decorating technique. Analysis of the small angle scattering precludes the presence of oxide particles smaller than about IjU , and microscopic examination discloses no particles larger than this indicating that there has been no coalesence of oxides.
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