Infrared characterization of SiN films on Si for high speed electronics applications
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Authors
Tellez, Galdino Mejia
Subjects
Electron mobility
Effective mass
Stress
Strain
SiN films
Effective mass
Stress
Strain
SiN films
Advisors
Karunasiri, Gamani
Brown, Ronald E.
Date of Issue
2004-12
Date
December 2004
Publisher
Monterey, CA; Naval Postgraduate School
Language
Abstract
In this thesis, SiN films grown on Si substrates were characterized using Fourier Transform Infrared (FTIR) spectroscopy. The stress in SiN films can be used to enhance of mobility of electrons and holes which increases the performance of metal-oxide-semiconductor (MOS) transistors. The samples used in this study were prepared by Applied Materials using chemical vapor deposition (CVD) technique with different growth parameters. The stress of the samples varied from 1.3 GPa compressive to 1 GPa tensile depending on the growth conditions employed. The FTIR measurement showed three distinct absorption peaks associated with Si-N, Si-H and N-H vibrational modes. The hydrogen was unintentionally incorporated into the SiN film during the CVD process due to its use as the carrier gas for the precursors. It was found from the FTIR data that the area under Si-H and N-H peaks (amount of bonds) varies in opposite directions when the film stress changes from compressive to tensile. In addition, the peak position of the Si-H absorption shifted to higher energy while the opposite was true for N-H as the stress changes from compressive to tensile. The strength and the position of the Si-N absorption peak were found to be relatively insensitive to the stress of the film. This indicates that the amount of Si-H and N-H bonds in the film is responsible for controlling the stress of the film. The use of quantum calculation of SiN molecules with different amount of Si-H and N-H bonds was used toward understanding the experimental absorption spectra.
Type
Thesis
Description
Series/Report No
Department
Department of Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
xii, 36 p. : col. ill.
Citation
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
Copyright is reserved by the copyright owner