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        An experimental approach for studying the creep behavior of thin film/ substrate interfaces

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        Author
        Parks, Carl L.
        Date
        2004-09
        Advisor
        Dutta, Indranath
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        Abstract
        Large shear stresses often develop at the interface between dissimilar materials in microelectronic devices, when they are subjected to thermo-mechanical excursions. These stresses can facilitate diffusionally accommodated interfacial sliding, or creep. A driving factor for these stresses is the thermal expansion mismatch between the adjoining materials. For narrow thin film lines, these stresses may exist over a large fraction of the film-substrate interface. This thesis explores methodologies to measure the kinetics of interfacial creep at model Al thin film/silicon substrate interfaces. A method of sample production, which involved diffusion bonding a polished Si substrate to the surface of a thin Al film deposited on a second Si substrate was developed (Si/Al/Si sandwich). When loaded edge-wise in compression, the Al thin film - Si interface are loaded in shear. By measuring the relative displacements between the two Si substrates, the interfacial displacement rates at varying temperatures and stresses were experimentally determined. In accordance with previous results, the kinetics was given by a diffusional creep law with a threshold stress, and an activation energy representing interfacial diffusion. The activation energy was found to be unusually low, and further experimental and modeling studies are needed to better understand its origin.
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        Approved for public release; distribution is unlimited
        URI
        http://hdl.handle.net/10945/1368
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        • 1. Thesis and Dissertation Collection, all items

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          Sample fabrication and experimental design for studying interfacial creep at thin film/silicon interfaces 

          Thornell, Mark E. (Monterey California. Naval Postgraduate School, 2004-03);
          This thesis developed the sample fabrication and experimental design for studying interfacial creep at thin film / Silicon interfaces. The specific interface of study was the crystalline interface created by Positive Vapor ...
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          Measurements and observations of interfacial creep in engineering systems 

          Peterson, Keith A. (Monterey, California. Naval Postgraduate School, 2002., 2002-09);
          In many applications, large shear stresses develop at interfaces between dissimilar materials during thermo-mechanical excursions, when there is a significant difference in the coefficient of thermal expansion between them. ...
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          Sample fabrication and experimental approach for studying interfacial sliding in thin film-substrate systems 

          Burkhard, Michael A. (Monterey California. Naval Postgraduate School, 2006-09);
          The purpose of this thesis was to develop an experimental methodology to determine the mechanisms and kinetics of sliding at the interface between a metallic thin film and substrate. A methodology was developed and used ...
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