Mathematical modeling and sensitivity analysis of radiation effects on semiconductor junctions
Drouin, Leon Eugene, Jr.
Parker, Sydney R.
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This thesis is concerned with the numerical solution of a semiconductor junction recovery from a radiation pulse. The junctions is represented by an Ebers-Moll model to account for diffusion current and space-charge capacitance. The radiation pulse is considered as giving rise to a photocurrent to which it is related by a linear differential equation. Exact solutions are presented and the recovery time is presented and discussed as a function of several parameters. A simple piecewise linear analysis for a diode circuit is also presented to provide insight into the nature of the transient response and the recovery time.
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